JANTXV2N5684 Datasheet, PDF (1/2 Pages) Microsemi Corporation – NPN POWER SILICON TRANSISTOR

NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/466
Devices
2N5683
2N5684
TECHNICAL DATA
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol 2N5683 2N5684
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation ⁽¹⁾
@ TC = 25⁰C
@ TC = 100⁰C
V_CEO
V_CBO
V_EBO
IB
I_C
P_T
60
80
60
80
5.0
15
50
300
171
Operating & Storage Junction Temperature Range T_J, T_stg
THERMAL CHARACTERISTICS
-65 to +200
Characteristics
Symbol
Max.
Thermal Resistance, Junction-to-Case
R_θJC
0.584
1) Derate linearly 1.715 W/⁰C between TC = +25⁰C and TC = +200⁰C
ELECTRICAL CHARACTERISTICS (T_C = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 200 mAdc
2N5683
2N5684
V(BR)_CEO
Collector-Emitter Cutoff Current
V_CE = 30 Vdc
2N5683
I_CEO
V_CE = 40 Vdc
2N5684
Collector-Emitter Cutoff Current
V_CE = 60 Vdc, V_BE = 1.5 Vdc
2N5683
I_CEX
V_CE = 80 Vdc, V_BE = 1.5 Vdc
2N5684
Collector-Base Cutoff Current
V_CB = 60 Vdc
2N5683
I_CBO
V_CB = 80 Vdc
2N5684
Emitter-Base Cutoff Current
V_EB = 5.0 Vdc
I_EBO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W
0_C
Unit
0_C/W
TO-3*
(TO-204AA)
*See appendix A for
package outline
Min. Max.
Unit
60
Vdc
80
5.0
µAdc
5.0
5.0
µAdc
5.0
5.0
µAdc
5.0
5.0
µAdc
120101
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