JANTX2N6301 Datasheet, PDF (1/2 Pages) Microsemi Corporation – PNP DARLINGTON POWER SILICON TRANSISTOR

TECHNICAL DATA
PNP DARLINGTON POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/539
Devices
2N6300
2N6301
Qualified Level
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TC = 0⁰C ⁽¹⁾
@ TC = 100⁰C
V_CEO
V_CBO
V_EBO
IB
I_C
P_T
Operating & Storage Junction Temperature Range T_J, T_stg
1) Derate linearly 0.428 W/⁰C above TC > 0⁰C
2N6300 2N6301
60
80
60
80
5.0
120
8.0
75
32
-55 to +200
ELECTRICAL CHARACTERISTICS (T_C = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 100 mAdc
2N6300
2N6301
V(BR)_CEO
Collector-Emitter Cutoff Current
V_CE = 30 Vdc
2N6300
I_CEO
V_CE = 40 Vdc
Collector-Emitter Cutoff Current
2N6301
V_CE = 60 Vdc, V_BE = -1.5 Vdc
2N6300
I_CEX
V_CE = 80 Vdc, V_BE = -1.5 Vdc
Emitter-Base Cutoff Current
2N6301
V_EB = 5.0 Vdc
I_EBO
Units
Vdc
Vdc
Vdc
mAdc
Adc
W
W
0_C
Min.
60
80
TO-66* (TO-213AA)
*See appendix A for
package outline
Max.
Unit
Vdc
0.5
mAdc
0.5
0.5
mAdc
0.5
2.0
mAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
120101
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