JANTX2N5664 Datasheet, PDF (1/3 Pages) Microsemi Corporation – ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http: //www.microsemi.com
NPN POWER SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/455
DEVICES
2N5664
2N5665
2N5666 2N5667
2N5666S 2N5667S
2N5666U3
ABSOLUTE MAXIMUM RATINGS (T_C = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
2N5664 2N5665
2N5666, S 2N5667, S
Unit
Collector-Emitter Voltage
V_CEO
200
300
Vdc
Collector-Base Voltage
V_CBO
250
400
Vdc
Emitter-Base Voltage
V_EBO
6.0
Vdc
Base Current
I_B
1.0
Adc
Collector Current
I_C
5.0
Adc
2N5664
2N5665
2N5666, S
2N5667, S
2N5666U3
Total
1/
Power Dissipation
@ T_A = +25°C
@ T_C = +100°C
P_T
2.5
30
1.2
15
1.5
35
W
Operating & Storage Junction
Temperature Range
T_J, T_stg
-65 to +200
°C
Note: 1) Consult 19500/455 for thermal derating curves.
ELECTRICAL CHARACTERISTICS (T_C = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol Min. Max. Unit
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I_C = 10mAdc
2N5664, 2N5666
V_(BR)CER
250
Vdc
2N5665, 2N5667
400
Emitter-Base Breakdown Voltage
I_E = 10μAdc
V_(BR)EBO
6.0
Collector-Emitter Cutoff Current
V_CE = 200Vdc
V_CE = 300Vdc
2N5664, 2N5666
I_CES
2N5665, 2N5667
Collector-Base Cutoff Current
V_CB = 200Vdc
V_CB = 250Vdc
V_CB = 300Vdc
V_CB = 400Vdc
2N5664, 2N5666
I_CBO
2N5665, 2N5667
Vdc
0.2
μAdc
0.2
0.1
μAdc
1.0 mAdc
0.1
μAdc
1.0 mAdc
T4-LDS-0062 Rev. 1 (081095)
LEVELS
JAN
JANTX
JANTV
JANS
TO-66 (TO-213AA)
2N5664, 2N5665
TO-5
2N5666, 2N5667
TO-39 (TO-205AD)
2N5666S, 2N5667S
U-3
2N5666U3
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