JANTX2N5303 Datasheet, PDF (1/2 Pages) Microsemi Corporation – NPN HIGH POWER SILICON TRANSISTOR

TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/456
Devices
2N5302
2N5303
Qualified Level
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Base Current
Total Power Dissipation
@ TA = +25⁰C⁽¹⁾
@ TC = +100⁰C⁽²⁾
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 28.57 mW/⁰C for TA = +25⁰C
2) Derate linearly 1.14 W/⁰C for TC = +100⁰C
Symbol
V_CEO
V_CBO
V_EBO
I_C
I_B
P_T
T_J, T_stg
Symbol
R_θJC
ELECTRICAL CHARACTERISTICS
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
I_C = 200 mAdc, IB = 0
2N5302
2N5303
Collector-Emitter Cutoff Current
V_CE = 60 Vdc, IB = 0
2N5302
V_CE = 80 Vdc, IB = 0
Emitter-Base Cutoff Current
2N5303
V_EB = 5.0 Vdc, IC = 0
Collector-Emitter Cutoff Current
V_BE = 1.5 Vdc, V_CE = 60 Vdc
V_BE = 1.5 Vdc, V_CE = 80 Vdc
Collector-Emitter Cutoff Current
2N5302
2N5303
V_CE = 60 Vdc
2N5302
V_CE = 80 Vdc
2N5303
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
2N5302 2N5303
60
80
60
80
5.0
30
20
7.5
5.0
115
-65 to +200
Max.
0.875
Symbol
V(BR)_CEO
I_CEO
I_EBO
I_CEX
I_CBO
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W/⁰C
0_C
Unit
0_C/W
TO-3*
(TO-204AA)
*See appendix A for
package outline
Min. Max.
Unit
60
Vdc
80
10
µAdc
10
5.0
µAdc
5.0
µAdc
5.0
5.0
µAdc
5.0
120101
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