JANTX2N3467 Datasheet, PDF (1/2 Pages) Microsemi Corporation – PNP SILICON SWITCHING TRANSISTOR

PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/348
Devices
2N3467
2N3467L
2N3468
2N3468L
TECHNICAL DATA
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +25⁰C⁽¹⁾
@ TC = +25⁰C⁽²⁾
Operating & Storage Junction Temperature Range
1) Derate linearly 5.71 mW/⁰C for TA > +25⁰C
2) Derate linearly 28.6 mW/⁰C for TC > +25⁰C
Symbol
V_CEO
V_CBO
V_EBO
I_C
P_T
T_op, T_stg
2N3467 2N3468
2N3467L 2N3468L
40
50
40
50
5.0
1.0
1.0
5.0
-55 to +175
Unit
Vdc
Vdc
Vdc
Adc
W
W
0_C
TO-39* (TO-205AD)
2N3467, 2N3468
TO-5*
2N3467L, 2N3468L
ELECTRICAL CHARACTERISTICS
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
I_C = 10 mAdc
Emitter-Base Breakdown Current
I_E = 10 µAdc
Collector-Emitter Breakdown Current
I_C = 10 mAdc
Collector-Base Cutoff Current
V_CB = 30 Vdc
Collector-Emitter Cutoff Current
V_EB = 3.0 Vdc, V_CE = 30
Symbol
2N3467, L
2N3468, L
2N3467, L
2N3468, L
V(BR)_CBO
V(BR)_EBO
V(BR)_CEO
I_CBO
I_CEX
Min.
*See appendix A for
package outline
Max. Unit
40
Vdc
50
5.0
Vdc
40
Vdc
50
100
ηAdc
100
nAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
120101
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