JANTX1N6508 Datasheet, PDF (1/1 Pages) Microsemi Corporation – DIODE ARRAY PRODUCT SPECIFICATION

A Microsemi Company
580 Pleasant St.
Watertown, MA 02472
1N6508
JANTX, JANTXV
Phone: [phone]
Fax: [phone]
DIODE ARRAY PRODUCT SPECIFICATION
MONOLITHIC AIR ISOLATED
DIODE ARRAY
12
11
FEATURES:
9
• QUALIFIED PARTS LISTING: MIL-PRF-19500/474
• Bv > 60V at 10uA
8
• Ir < 100nA at 40V
7
• C < 8.0 pF
5
Absolute Maximum Ratings:
3
Symbol
Parameter
Limit Unit
1
4
2
6
10
13
14
NOT CONNECTED
VBR(R) *1 *2 Reverse Breakdown Voltage
IO *1 * 3 Continuous Forward Current
IFSM *1 Peak Surge Current (tp= 1/120 s)
PT1 *4 Power Dissipation per Junction @ 25°C
PT2 *4 Power Dissipation per Package @ 25°C
Top
Operating Junction Temperature Range
Tstg
Storage Temperature Range
NOTE 1: Each Diode
NOTE 2: Pulsed: PW = 100ms max.; duty cycle < 20%
NOTE 3: Derate at 2.4mA/°C above +25 °C
NOTE 4: Derate at 4.0mW/°C above +25 °C
60 Vdc
300 mAdc
500 mAdc
400 mW
600 mW
-65 to +150 °C
-65 to +200 °C
.200
.125
.023
.014
.070
.030
.100
BSC
.200
MAX
.785
MAX
.060
.015
.320
.290
.310
.220
.005
MIN
.098
MAX
Electrical Characteristics (Per Diode) @
25°C unless otherwise specified
O-15
.015
.008
PACKAGE OUTLINE
Symbol Parameter
Conditions
Min Max Unit
Vf1
Forward Voltage
If = 100mAdc *1
Vf2
Forward Voltage
If = 500mAdc *1
IR1
Reverse Current
VR = 40 Vdc
Ct
Capacitance (pin to pin) VR = 0 Vdc ; f = 1MHz
tfr
Forward Recovery Time If = 500mAdc
trr
Reverse Recovery Time If = IR = 200mAdc, irr = 20mAdc, RL = 100 ohms
1 Vdc
1.5 Vdc
0.1 uAdc
8.0 pF
40 ns
20 ns
NOTE 1: Pulsed: PW = 300us +/- 50us, duty cycle < 2%, 90us after leading edge
Sertech reserves the right to make changes to any product design, specification or other
information at any time without prior notice.
MSC1007.PDF Rev - 11/25/98