JANTX1N6464 Datasheet, PDF (1/6 Pages) Microsemi Corporation – Voidless Hermetically Sealed Unidirectional Transient Voltage Suppressors

1N6461 – 1N6468
Available on
commercial
versions
Voidless Hermetically Sealed Unidirectional
Transient Voltage Suppressors
Qualified per MIL-PRF-19500/551
DESCRIPTION
This series of 500 watt voidless hermetically sealed unidirectional Transient Voltage Suppressors
(TVS) are military qualified to MIL-PRF-19500/551 and are ideal for high-reliability applications
where a failure cannot be tolerated. Working peak “standoff” voltages are available from 5.0 to
51.6 volts. They are very robust, using a hard glass casing and internal Category 1 metallurgical
bonds. These devices are also available in a surface mount MELF package configuration.
Qualified Levels:
JAN, JANTX, and
JANTXV
Important: For the latest information, visit our website http://www.microsemi.com.
FEATURES
• Popular JEDEC registered 1N6461 thru 1N6468 series.
• Available as 500 W peak pulse power (PPP).
• Working peak “standoff” voltage (VWM) from 5.0 to 51.6 V.
• High surge current and peak pulse power provides transient voltage protection for sensitive circuits.
• Triple-layer passivation.
• Internal “Category 1” metallurgical bonds.
• Voidless hermetically sealed glass package.
• JAN, JANTX, and JANTXV qualifications available per MIL-PRF-19500/551. Other screening in
reference to MIL-PRF-19500 is also available.
(See part nomenclature for all available options.)
• RoHS compliant versions available (commercial grade only).
APPLICATIONS / BENEFITS
• Military and other high-reliability transient protection.
• Extremely robust construction.
• ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectively.
• Protection from secondary effects of lightning per select levels in IEC61000-4-5.
• Flexible axial-leaded mounting terminals.
• Nonsensitive to ESD per MIL-STD-750 method 1020.
• Inherently radiation hard as described in Microsemi “MicroNote 050”.
“B” Package
Also available in:
“B” SQ-MELF
Package
(surface mount)
1N6461US - 1N6468US
MAXIMUM RATINGS @ 25 ºC
Parameters/Test Conditions
Junction and Storage Temperature
Thermal Resistance, Junction to Lead ⁽¹⁾
Forward Surge Current @ 8.3 ms half-sine
Forward Voltage @ 1 Amp
Peak Pulse Power @ 10/1000 µs
Reverse Power Dissipation ⁽²⁾
Solder Temperature @ 10 s
Notes: 1. At L = 0.375 inch (9.53 mm) from body.
2. Derate at 16.7 mW/^oC (see figure 4).
Symbol
TJ and TSTG
R Ó¨JL
I FSM
VF
P PP
PR
Value
-55 to +175
60
80
1.5
500
2.5
260
Unit
o_C
ºC/W
A
V
W
W
o_C
MSC – Lawrence
6 Lake Street,
Lawrence, MA 01841
Tel: [phone] or
[phone]
Fax: [phone]
MSC – Ireland
Gort Road Business Park,
Ennis, Co. Clare, Ireland
Tel: [phone]
Fax: [phone]
Website:
www.microsemi.com
T4-LDS-0286, Rev. 1 (4/22/13)
©2013 Microsemi Corporation
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