JANTX1N5618US Datasheet, PDF (1/3 Pages) Microsemi Corporation – VOIDLESS-HERMETICALLY-SEALED SURFACE MOUNT STANDARD RECOVERY GLASS RECTIFIERS

SCOTTSDALE DIVISION
1N5614US thru 1N5622US
VOIDLESS-HERMETICALLY-SEALED
SURFACE MOUNT STANDARD
RECOVERY GLASS RECTIFIERS
DESCRIPTION
This “standard recovery” surface mount rectifier diode series is military qualified to MIL-
PRF-19500/427 and is ideal for high-reliability applications where a failure cannot be
tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak reverse
voltages from 200 to 1000 volts are hermetically sealed with voidless-glass construction
using an internal “Category I” metallurgical bond. These devices are also available in
axial-leaded thru-hole package configurations (see separate data sheet for 1N5614 thru
1N5622). Microsemi also offers numerous other rectifier products to meet higher and
lower current ratings with various recovery time speed requirements including fast and
ultrafast device types in both through-hole and surface mount packages.
APPEARANCE
Package “A”
or D-5A
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
• Surface mount package series equivalent to the
JEDEC registered 1N5614 to 1N5622 series
• Voidless hermetically sealed glass package
• Triple-Layer Passivation
• Internal “Category I” Metallurgical bonds
• Working Peak Reverse Voltage 200 to 1000 Volts.
• JAN, JANTX, JANTXV, and JANS available per MIL-
PRF-19500/427
• Axial-leaded equivalents also available (see separate
data sheet for 1N5614 thru 1N5622)
• Standard recovery 1 Amp rectifiers 200 to 1000 V
• Military and other high-reliability applications
• General rectifier applications including bridges, half-
bridges, catch diodes, etc.
• High forward surge current capability
• Extremely robust construction
• Low thermal resistance
• Controlled avalanche with peak reverse power
capability
• Inherently radiation hard as described in Microsemi
MicroNote 050
MAXIMUM RATINGS
• Junction & Storage Temperature: -65^oC to +200^oC
• Thermal Resistance: 13^oC/W junction to end cap
• Thermal Impedance: 4.5^oC/W @ 10 ms heating time
• Average Rectified Forward Current (I_O): 1.0 Amps @
T_A = 55ºC and 0.75 Amps @ T_A = 100ºC
• Forward Surge Current: 30 Amps @ 8.3 ms half-sine
• Solder Temperatures: 260ºC for 10 s (maximum)
MECHANICAL AND PACKAGING
• CASE: Hermetically sealed voidless hard glass
with Tungsten slugs
• TERMINALS: End caps are Copper with Tin/Lead
(Sn/Pb) finish. Note: Previous inventory had solid
Silver end caps with Tin/Lead (Sn/Pb) finish.
• MARKING & POLARITY: Cathode band only
• TAPE & REEL option: Standard per EIA-481-B
• WEIGHT: 193 mg
• See package dimensions and recommended pad
layout on last page
ELECTRICAL CHARACTERISTICS
WORKING
MINIMUM
AVERAGE
FORWARD
REVERSE
MAXIMUM REVERSE
PEAK
BREAKDOWN
RECTIFIED
VOLTAGE
CURRENT
SURGE RECOVERY
TYPE
REVERSE
VOLTAGE
CURRENT
(MAX.)
(MAX.)
CURRENT (NOTE 3)
VOLTAGE V_RWM V_BR @ 50μA
I_O @ T_A
(NOTE 1)
V_F @ 3A
I_R @ V_RWM
I_FSM
t_rr
(NOTE 2)
VOLTS
VOLTS
AMPS
VOLTS
μA
AMPS
μs
55^oC
100^oC
25^oC
100^oC
1N5614US
200
220
1.00
.750
0.5
25
30
2.0
1N5616US
400
440
1.00
.750
0.8 MIN.
0.5
25
30
2.0
1N5618US
600
660
1.00
.750
0.5
25
30
2.0
1N5620US
800
880
1.00
.750
1.3 MAX.
0.5
25
30
2.0
1N5622US
1000
1100
1.00
.750
0.5
25
30
2.0
NOTE 1: From 1 Amp at T_A = 55^oC, derate linearly at 5.56 mA/ ^oC to 0.75 Amp at T_A = 100^oC. From T_A = 100^oC,
derate linearly at 7.5 mA/^oC to 0 Amps at T_A = 200 ^oC. These ambient ratings are for PC boards where thermal
resistance from mounting point to ambient is sufficiently controlled where T_J(max) does not exceed 175 ^oC.
NOTE 2: T_A = 100 ^oC, f = 60 Hz, I_O = 750 mA for ten 8.3 ms surges @ 1 minute intervals
NOTE 3: I_F = 0.5A, I_RM = 1A, I_R(REC) = 0.250A
Copyright © 2009
10-06-2009 REV D; SA7-45.pdf
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, [phone], Fax: [phone]
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