JANSR2N2907AUB Datasheet, PDF (1/6 Pages) Microsemi Corporation – ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http: //www.microsemi.com
RADIATION HARDENED
PNP SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/291
DEVICES
2N2906A
2N2906AL
2N2906AUA
2N2906AUB
2N2906AUBC
2N2907A
2N2907AL
2N2907AUA
2N2907AUB
2N2907AUBC
LEVELS
JANSM – 3K Rads (Si)
JANSD – 10K Rads (Si)
JANSP – 30K Rads (Si)
JANSL – 50K Rads (Si)
JANSR – 100K Rads (Si)
ABSOLUTE MAXIMUM RATINGS (T_C = +25°C unless otherwise noted)
Parameters / Test Conditions
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ T_A = +25°C
Operating & Storage Junction Temperature Range
Symbol
V_CEO
V_CBO
V_EBO
I_C
P_T ⁽¹⁾
T_op, T_stg
Value
60
60
5.0
600
0.5
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
W
°C
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
Max.
Unit
Thermal Resistance, Junction-to-Ambient
1. See MIL-PRF-19500/291 for derating curves.
R_θJA ⁽¹⁾
325
°C/W
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 10mAdc
Collector-Base Cutoff Current
V_CB = 60Vdc
V_CB = 50Vdc
Emitter-Base Cutoff Current
V_EB = 5.0Vdc
V_EB = 4.0Vdc
Collector-Emitter Cutoff Current
V_CE = 50Vdc
Symbol
Min. Max. Unit
V_(BR)CEO
60
Vdc
I_CBO
10
μAdc
10
ηAdc
I_EBO
10
μAdc
50
ηAdc
I_CES
50
ηAdc
TO-18 (TO-206AA)
2N2906A, 2N2907A
4 PIN
2N2906AUA, 2N2907AUA
3 PIN
2N2906AUB, 2N2907AUB
2N2906AUBC, 2N2907AUBC
(UBC = Ceramic Lid Version)
T4-LDS-0055 Rev. 4 (100247)
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