JANS2N2484 Datasheet, PDF (1/2 Pages) Microsemi Corporation – ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)

TECHNICAL DATA
NPN SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/376
Devices
2N2484
Qualified Level
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = +25⁰C ⁽¹⁾
@ TC = +25⁰C ⁽²⁾
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 2.06 mW/⁰C above TA = +25⁰C
2) Derate linearly 6.85 mW/⁰C above TC = +25⁰C
Symbol
V_CEO
V_CBO
V_EBO
I_C
P_T
T_J, T_stg
2N2484
60
60
6.0
50
360
1.2
-65 to +200
Unit
Vdc
Vdc
Vdc
mAdc
mW
W
0_C
Symbol
R_θJC
Max.
146
Unit
0_C/W
TO- 18*
(TO-206AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T_A = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Current
I_C = 10 mAdc
Collector-Emitter Cutoff Current
V_CE = 45 Vdc
Collector-Base Cutoff Current
V(BR)_CEO
I_CES
V_CB = 45 Vdc
I_CBO
V_CB = 60 Vdc
Collector-Emitter Cutoff Current
V_CE = 5.0 Vdc
I_CEO
Emitter-Base Cutoff Current
V_EB = 5.0 Vdc
I_EBO
V_EB = 6.0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Min. Max.
Unit
60
Vdc
5.0
ηAdc
5.0
ηAdc
10
µAdc
2.0
ηAdc
2.0
ηAdc
10
µAdc
120101
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