JANS2N2222AUB Datasheet, PDF (1/6 Pages) Microsemi Corporation – ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)

6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
NPN SILICON SWITCHING TRANSISTOR
Qualified per MIL-PRF-19500/255
DEVICES
2N2221A
2N2221AL
2N2221AUA
2N2221AUB
2N2221AUBC *
* Available to JANS quality level only.
2N2222A
2N2222AL
2N2222AUA
2N2222AUB
2N2222AUBC *
LEVELS
JAN
JANTX
JANTXV
JANS
ABSOLUTE MAXIMUM RATINGS (T_C = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Value Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation @ T_A = +25°C
Operating & Storage Junction Temperature Range
V_CEO
V_CBO
V_EBO
I_C
P_T
T_op, T_stg
50
75
6.0
800
0.5
-65 to +200
Vdc
Vdc
Vdc
mAdc
W
°C
THERMAL CHARACTERISTICS
Parameters / Test Conditions
Symbol
Thermal Resistance, Junction-to-Ambient
2N2221A, L
2N2222A, L
R_θJA
2N2221AUA
2N2222AUA
2N2221AUB, UBC
2N2222AUB, UBC
Note: Consult 19500/255 for thermal performance curves.
1. Derate linearly 3.08mW/°C above T_A > +37.5°C
2. Derate linearly 4.76mW/°C above T_A > +63.5°C
Max.
325
210
325
Unit
°C/W
ELECTRICAL CHARACTERISTICS (T_A = +25°C, unless otherwise noted)
Parameters / Test Conditions
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
I_C = 10mAdc
Collector-Base Cutoff Current
V_CB = 75Vdc
V_CB = 60Vdc
Emitter-Base Cutoff Current
V_EB = 6.0Vdc
V_EB = 4.0Vdc
Collector-Emitter Cutoff Current
V_CE = 50Vdc
Symbol
Min. Max. Unit
V_(BR)CEO
50
I_CBO
I_EBO
I_CES
Vdc
10
μAdc
10
ηAdc
10
μAdc
10
ηAdc
50
ηAdc
T4-LDS-0060 Rev. 2 (100247)
TO-18 (TO-206AA)
2N2221A, 2N2222A
4 PIN
2N2221AUA, 2N2222AUA
3 PIN
2N2221AUB, 2N2222AUB
2N2221AUBC, 2N2222AUBC
(UBC = Ceramic Lid Version)
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