JAN2N3902 Datasheet, PDF (1/2 Pages) Microsemi Corporation – NPN HIGH POWER SILICON TRANSISTOR

TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/371
Devices
2N3902
2N5157
Qualified Level
JAN
JANTX
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = +25⁰C ⁽¹⁾
@ TC = +75⁰C ⁽²⁾
Operating & Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 29 mW/⁰C for TA > +25⁰C
2) Derate linearly 0.8 W/⁰C for TC > +75⁰C
Symbol
V_CEO
V_EBO
V_CBO
I_B
I_C
P_T
Tj, T_stg
Symbol
R_θJC
ELECTRICAL CHARACTERISTICS
Characteristics
OFF CHARACTERISTICS
Collector-Emitter Cutoff Current
V_CE = 325 Vdc
2N3902
V_CE = 400 Vdc
Collector-Emitter Cutoff Current
2N5157
V_BE = 1.5 Vdc; V_CE = 700 Vdc
Emitter-Base Cutoff Current
V_EB = 5.0 Vdc
2N3902
V_EB = 6.0 Vdc
ON CHARACTERISTICS⁽³⁾
2N5157
Base-Emitter Saturation Voltage
IC = 1.0 Adc; IB = 0.1 Adc
IC = 3.5 Adc; IB = 0.7 Adc
Collector-Emitter Saturation Voltage
IC = 1.0 Adc; IB = 0.1 Adc
IC = 3.5 Adc; IB = 0.7 Adc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
2N3902 2N5157
400
500
5.0
6.0
700
2.0
3.5
5.0
100
-65 to +200
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W
0_C
Max.
1.25
Unit
0_C/W
TO-3 (TO-204AA)*
Symbol
*See Appendix A for Package
Outline
Min. Max.
Unit
I_CEO
250
µAdc
250
I_CEX
500
µAdc
I_EBO
200
µAdc
200
VBE(sat)
VCE(sat)
1.5
Vdc
2.0
0.8
Vdc
2.5
120101
Page 1 of 2