JAN2N3772 Datasheet, PDF (1/2 Pages) Microsemi Corporation – NPN HIGH POWER SILICON TRANSISTOR

TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/518
Devices
2N3771
2N3772
Qualified Level
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = +25⁰C ⁽¹⁾
@ TC = +25⁰C ⁽²⁾
Operating & Storage Junction Temperature Range
1) Derate linearly 34.2 mW/⁰C for TA > +25⁰C
2) Derate linearly 857 mW/⁰C for TC > +25⁰C
Symbol
V_CEO
V_CBO
V_EBO
IB
I_C
P_T
T_J, T_stg
2N3771 2N3772
40
60
50
100
7.0
7.0
7.5
5.0
30
20
6.0
150
-65 to +200
ELECTRICAL CHARACTERISTICS (T_A = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
I_C = 200 mAdc
2N3771
2N3772
V(BR)_CEO
Collector-Emitter Breakdown Voltage
I_C = 200 mAdc, R_BE = 100 Ω
2N3771
2N3772
V(BR)_CER
Collector-Emitter Breakdown Voltage
I_C = 200 mAdc, V_BE = -1.5 Vdc
2N3771
2N3772
V(BR)_CEX
Collector-Emitter Cutoff Current
V_CE = 30 Vdc
2N3771
I_CEO
V_CE = 50 Vdc
Emitter-Base Cutoff Current
2N3772
V_BE = 7.0 Vdc
2N3771
I_EBO
2N3772
Collector-Emitter Cutoff Current
V_BE = 1.5 Vdc, V_CE = 50 Vdc
2N3771
I_CEX
V_BE = 1.5 Vdc, V_CE = 100 Vdc
2N3772
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W
0_C
TO-3*
(TO-204AA)
*See Appendix A for
Package Outline
Min. Max.
Unit
40
Vdc
60
45
Vdc
70
50
Vdc
90
5.0
mAdc
5.0
2.0
mAdc
500
µAdc
500
120101
Page 1 of 2