JAN2N3741 Datasheet, PDF (1/2 Pages) Microsemi Corporation – PNP POWER SILICON TRANSISTOR

PNP POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/441
Devices
2N3740
2N3741
TECHNICAL DATA
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TC = +25⁰C ⁽¹⁾
@ TC = +100⁰C
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly @143 mW/⁰C for TC > +25⁰C
Symbol
V_CEO
V_CBO
V_EBO
IB
I_C
P_T
T_J, T_stg
2N3740 2N3741
60
80
60
80
7.0
2.0
4.0
25
14
-65 to +200
Symbol
R_θJC
Max.
7.0
ELECTRICAL CHARACTERISTICS (T_C = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 100 mAdc
2N3740
2N3741
V(BR)_CEO
Collector-Emitter Cutoff Current
V_CE = 40 Vdc
2N3740
I_CEO
V_CE = 60 Vdc
Collector-Emitter Cutoff Current
2N3741
V_CE = 60 Vdc, V_BE = 1.5 Vdc
2N3740
I_CEX
V_CE = 80 Vdc, V_BE = 1.5 Vdc
Collector-Base Cutoff Current
2N3741
V_CB = 60 Vdc
2N3740
I_CBO
V_CB = 80 Vdc
Emitter-Base Cutoff Current
2N3741
V_EB = 7.0 Vdc
I_EBO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
W
0_C
Unit
0_C/W
TO-66 (TO-213AA)
*See Appendix A for
Package Outline
Min. Max.
Unit
60
Vdc
80
10
µAdc
10
300
ηAdc
300
100
ηAdc
100
100
ηAdc
120101
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