JAN2N3501 Datasheet, PDF (1/2 Pages) Microsemi Corporation – NPN SILICON TRANSISTOR

NPN SILICON TRANSISTOR
Qualified per MIL-PRF-19500/366
Devices
2N3498
2N3498L
2N3499
2N3499L
2N3500
2N3500L
TECHNICAL DATA
2N3501
2N3501L
Qualified Level
JAN
JANTX
JANTXV
JANS
MAXIMUM RATINGS
Ratings
2N3498^* 2N3500^*
Symbol 2N3499^* 2N3501^* Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
@ TA = 25⁰C ⁽¹⁾
@ TC = 25⁰C ⁽²⁾
Operating & Storage Junction Temp. Range
V_CEO
V_CBO
V_EBO
I_C
P_T
T_J, T_stg
100
150
100
150
6.0
6.0
500
300
1.0
5.0
-55 to +200
Vdc
Vdc
Vdc
mAdc
W
W
0_C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Max.
Unit
Thermal Resistance: Junction-to-Case
R_θJC
Junction-to-Ambient
R_θJA
35
0_C/W
175
*Electrical characteristics for “L” suffix devices are identical to the “non L” corresponding devices
1) Derate linearly 5.71 W/⁰C for TA > 25⁰C
2) Derate linearly 28.6 W/⁰C for TC > 25⁰C
ELECTRICAL CHARACTERISTICS (T_A = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I_C = 10 mAdc
2N3498, 2N3499
2N3500, 2N3501
V(BR)_CEO
Collector-Base Cutoff Current
V_CB = 50 Vdc
V_CB = 75 Vdc
2N3498, 2N3499
2N3500, 2N3501
I_CBO
V_CB = 100 Vdc
2N3498, 2N3499
V_CB = 150 Vdc
Emitter-Base Cutoff Current
2N3500, 2N3501
V_EB = 4.0 Vdc
I_EBO
V_EB = 6.0 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Min.
100
150
TO-5*
2N3498L, 2N3499L
2N3500L, 2N3501L
TO-39* (TO-205AD)
2N3498, 2N3499
2N3500, 2N3501
*See appendix A for
package outline
Max.
Unit
Vdc
50
ηAdc
50
ηAdc
10
µAdc
10
µAdc
25
ηAdc
10
µAdc
120101
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