JAN2N3442 Datasheet, PDF (1/2 Pages) –

TECHNICAL DATA
NPN HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/370
Devices
2N3442
Qualified Level
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = 25⁰C ⁽¹⁾
@ TC = 25⁰C ⁽²⁾
Operating & Storage Junction Temperature Range
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Derate linearly 34.2 mW/⁰C for TA > 25⁰C
2) Derate linearly 668 mW/⁰C for TC > 25⁰C
Symbol
V_CEO
V_CBO
V_CER
V_EBO
IB
I_C
P_T
T_J, T_stg
Value
140
160
150
7.0
7.0
10
6.0
117
-55 to +200
Symbol
R_θJC
Max.
1.5
ELECTRICAL CHARACTERISTICS (T_C = 25⁰C unless otherwise noted)
Characteristics
Symbol
OFF CHARACTERISTICS
Collector-Emitter Voltage
I_C = 3.0 Adc
V(BR)_CEO
Collector-Emitter Breakdown Voltage
I_C = 1.5 Adc, R_BE = 100 Ω
V(BR)_CER
Collector-Emitter Breakdown Voltage
I_C = 1.5 Adc, V_EB = 1.5 Vdc
V(BR)_CEX
Collector-Base Cutoff Current
V_CB = 140 Vdc, V_EB = 1.5 Vdc
I_CEX
Emitter-Base Cutoff Current
V_EB = 7.0 Vdc
I_EBO
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / [phone] / Fax: [phone]
Units
Vdc
Vdc
Vdc
Vdc
Adc
Adc
W
W
0_C
Unit
0_C/W
Min.
140
150
160
TO-3* (TO-204AA)
*See Appendix A for
Package Outline
Max.
Unit
Vdc
Vdc
Vdc
1.0
mAdc
1.0
mAdc
120101
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