HUM3002 Datasheet, PDF (1/2 Pages) Microsemi Corporation – High Voltage, High Power Pin Diode

HUM3002/3003/3004
High Voltage, High Power Pin Diode
PRODUCT PREVIEW/PRELIMINARY
DESCRIPTION
These Microsemi PIN diodes are perfect for high power switching
applications where high isolation, low loss, low distortion characteristics, and
high power handling capability are critical. These PIN diodes utilize
Microsemi’s SOGO passivation process for superior stable high voltage
operation. The package is a modified DO-4 structure for ease of mount down
with excellent thermal properties. No thin internal straps are used for
electrical connections. A surge current of 150 amperes at half sine 8.3 ms is
easily handled.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
DO-4 PIN
DIODE
KEY FEATURES
Non-magnetic Package For MRI
Application.
High Power, High Voltage
Package (4 kV -40 kW)
Stable High Voltage Chip
Passivation.
High Current Rating.
High Surge Current Rating.
Low Rs, Low Loss, Low Distortion
Design.
APPLICATIONS/BENEFITS
MRI Applications.
High Power Antenna Switching.
Band Switching.
Industrial Heating.
Maximum Ratings @ 25ºC
(UNLESS OTHERWISE SPECIFIED)
Parameter
Reverse Voltage
I_R = 10µA
Average Power
Dissipation
@ Stud =50°C
RF Power Handling
Capability(CW)
@Zo = 50 OHms
Rs = 0.1 OHM
@ Stud =50°C
Non-Repetitive
Sinusoidal Surge
Current (8.3 ms)
Storage Temperature
Range
Operating Temperature
Range
Thermal resistance
Junction-to Case
Symbol
V_R
I_O
P_RF
I_FSM
T_STG
T_OP
R_θJC
HUM3002
2,000
50
40
150
-55°C to
+150°C
-55°C to
+125
1.5
TYPE
HUM3003
HUM3004
3,000
4,000
50
50
40
40
150
-55°C to
+150°C
-55°C to
+125
1.5
150
-55°C to
+150°C
-55°C to
+125
1.5
Unit
V
W
kW
A
°C
°C
°C/W
ELECTRICAL CHARACTERISTICS
Parameter
Diode Resistance
Capacitance C_T
Reverse Current
Carrier Lifetime
Parallel Resistance
Forward Voltage
Symbol
R_S
C_T
I_R
τ
R_P
Vf
Conditions
F= 10 MHz, If = 250 mA
F= 1 MHz, 100 V
V_R @ Rated Voltage
If = 10 mA / 100 V
F= 1 MHz, 100 V
If = 0.5 A
Min
Typ.
Max Units
0.1
0.2
Ω
4.3
5.0
pF
10
µA
20
30
µs
5
kΩ
0.75
V
Microsemi