HUM2010 Datasheet, PDF (1/4 Pages) Microsemi Corporation – PIN DIODE HIGH POWER STUD

WATERTOWN DIVISION
HUM2010/HUM2015/HUM2020
PIN DIODE HIGH POWER STUD
DESCRIPTION
With high isolation, low loss, and low distortion characteristics, this
Microsemi Power PIN diode is perfect for the high power switching
applications where size and power handling capability are critical.
Its advantages also include the low forward bias resistance and high
zero bias impedance that are essential for low loss, high isolation and wide
bandwidth performance.
Hermetically sealed, SOGO passivated PIN chips with full-faced
metallurgical bonds on both sides to achieve high reliability and high surge
capability.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
!"High Power Stud Mount
Package
!"High Zero Bias Impedance
!"Very Low Inductance and
Capacitance
!"No Internal Lead Straps
!"Small Mechanical Outline
APPLICATIONS/BENEFITS
• MRI Applications
• High Power Antenna Switching
ABSOLUTE MAXIMUM RATINGS
Maximum Reverse Voltage
Average Power Dissipation @ Stud = 50°C
1000/1500/2000 V
13 W
Non-Repetitive Sinusoidal Surge Current (8.3 ms)
Storage Temperature Range
100 A
65°C to +175°C
Operating Temperature Range
55°C to +150°C
Thermal Resistance
7.5°C / W
Voltage Ratings [25°C]
Reverse Voltage
Part type
(VR) - Volts
IR = 10µA
1000V
HUM2010
1500V
HUM2015
2000V
HUM2020
Test
Diode Resistance R_S
Capacitance C_T
Reverse Current I_R
Carrier Lifetime τ
Parallel Resistance R_P
Forward Voltage V_f
E L E C T R I C A L S P E C I F I C A T I O N S [25°C]
Min
Typ
Max
Units
Conditions
0.10
0.20
3.4
4.0
10
10
30
200
0.85
1.0
Ω
F = 4 MHz, I_f =0.5 A
pF
F = 1 MHz, 100 V
µA
VR @ Rated Voltage
µs
I_f =10 mA / 100 V
KΩ
F = 10 MHz, 100 V
V
I_f = 0.5 A
Copyright  2000
MSC0874.PDF 2000-08-23
Microsemi
Watertown Division
580 Pleasant Street, Watertown, MA. 02172, 617-926-0404, Fax: [phone]
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