GC9981 Datasheet, PDF (1/2 Pages) Microsemi Corporation – Schottky Barrier Diodes TM Ultra High Drive Monolithic

®
TM
DESCRIPTION
Microsemi’s Schottky Barrier devices are currently available in the eight
junction ring quad configuration. Devices are available in monolithic form for
hybrid applications as well as in hermetic or non-hermetic packages.
Monolithic devices are recommended for highest frequency, broadband
designs. The beamlead design eliminates the problems associated with wire
bonding very small junction devices thus improving reliability and
performance in MIC applications. Our in house epitaxy process capability
insures repeatability for lowest conversion loss through Ku Band. A broad
range of unique metallization schemes produce Microsemi’s complete line of
barrier heights. Diodes are available with barrier heights ranging from 600 mV
to 1300 mV per leg. By optimizing epitaxy and metallization, these devices
achieve lowest Rs-Cj products resulting in exceptional conversion loss
performance. “High Rel” screening is available on packaged devices per your
requirements.
This series of devices meets RoHS requirements per EU Directive
2002/95/EC.
APPLICATIONS
Schottky Barrier diodes are suitable for a variety of circuit applications
ranging from double balanced RF mixers to high speed switching and
modulation. The monolithic beamlead design minimizes parasitic inductance
and capacitance insuring repeatable performance through Ka band. With
junction capacitances as low as 0.06 pF. Monolithic 8 junction quads are
ideally suited for broad band high drive mixers through 26.5 GHz.
Ultra-High barrier diodes, (GC9980 Series) are designed for applications
where high drive levels are available, such as, Doppler mixers or motion
detection. Microsemi also has Schottky diodes available in Ultra-Low,
Medium and High Drive levels to fit virtually any circuit requirement.
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Symbol
Value
Unit
Maximum Power Handling
P
100
mW
Storage Temperature
T_STG
-65 to +175
ºC
Operating Temperature
T_OP
-65 to +150
ºC
IMPORTANT:
For the most current data, consult our web site: www.microsemi.com
Specifications are subject to change, consult the factory for further information.
These devices are ESD sensitive and must be handled use using ESD precautions.
GC9981 – GC9989
Schottky Barrier Diodes
Ultra High Drive Monolithic
RoHS Compliant
KEY FEATURES
 Monolithic Design for Lowest
Parasitics and Matched Junction
Characteristics
 Low Noise Figure
 Suitable for Applications to 26.5
GHz
 Excellent Conversion Loss
 Available High and Ultra-High
Barrier Heights
 Can be Supplied as Monolithic
Devices for Hybrid Applications or
as Packaged Devices
 RoHS Compliant¹
1 _{These devices are supplied with Gold}
plated terminations. Consult factory for
details.
APPLICATIONS/BENEFITS
 RF Mixers
 Double Balanced Mixers
 High Speed Switching
 Motion Detection
 Phase Detectors
Copyright  2007
Rev: 2009-01-19
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: [phone]
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