GC9901 Datasheet, PDF (1/6 Pages) Microsemi Corporation – Schottky Barrier Diodes TM For Mixers and Detectors

®
TM
DESCRIPTION
Schottky Barrier devices are currently available in single beamlead, dual “T”,
ring quad and bridge quad configurations. Devices are available in monolithic
form for hybrid applications as well as in hermetic or non-hermetic packages.
Monolithic devices are recommended for highest frequency, broadband
designs. The beamlead design eliminates the problems associated with wire
bonding very small junction devices thus improving reliability and
performance in MIC applications. Our in house epitaxy process capability
insures repeatability for lowest conversion loss through Ku Band. A broad
range of unique metallization schemes produce Microsemi’s complete line of
barrier heights. Diodes are currently available with barrier heights as low as
240 mV and up to 625 mV per junction. By optimizing epitaxy and
metallization, these devices achieve the lowest R_S-C_J products resulting in
exceptional conversion loss performance. “High Rel” screening is available on
packaged devices per your requirements.
This series of devices meets RoHS requirements per EU Directive
2002/95/EC.
APPLICATIONS
Schottky barrier diodes are suitable for a variety of circuit applications ranging
from single ended RF mixers to low level high speed switching. The
monolithic beamlead design minimizes parasitic inductance and capacitance
insuring repeatable performance through Ku band. Single junction devices
such as the style ‘S12’ are well suited for RF Mixers, level detectors, phase
detectors, modulators, etc. With junction capacitances as low as .06 pF,
Monolithic Quads are ideally suited for broadband double balanced mixer
designs through 26.5 GHz. The Ultra-Low Barrier devices (GC9900 Series)
are designed for mixers with low or starved Local Oscillator levels where
optimal conversion loss is a must. High barrier diodes, (GC9940 Series) are
designed for applications where high drive levels are available, such as,
Doppler mixers or motion detection. Schottky diodes are available in Ultra-
Low, Medium and High Drive levels to fit virtually any circuit requirement.
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
3B
Rating
Symbol
Value
Unit
Maximum Power Handling
P
100
mW
Storage Temperature
T_STG
-65 to +175
ºC
Operating Temperature
T_OP
-55 to +150
ºC
IMPORTANT:
For the most current data, consult our web site: www.microsemi.com
HU
U
Specifications are subject to change. Consult factory for latest information.
These devices are ESD sensitive and must be handled use using ESD precautions.
GC9901 – GC9944
Schottky Barrier Diodes
For Mixers and Detectors
RoHS Compliant
KEY FEATURES
 Monolithic design for lowest
parasitics
 Low Conversion Loss
 Suitable for applications to 26.5
GHz
 Excellent Noise Figure
 Available in low, medium and high
barrier heights
 Can be supplied as monolithic
devices for hybrid applications or
as packaged devices
 RoHS Compliant¹
1 _{These devices are supplied with Gold}
plated terminations. Consult factory for
details.
APPLICATIONS/BENEFITS
 Mixers
 Level Detectors
 Phase Detectors
Copyright  2006
Rev: 2009-01-19
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: [phone]
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