GC9700 Datasheet, PDF (1/2 Pages) Microsemi Corporation – SCHOTTKY BARRIER DIODES General Purpose TM

TM
®
DESCRIPTION
This unique mesa construction (GC9700, GC9701, and GC9702) provides
high breakdown voltage with true Schottky characteristics without resorting to
the use of a diffused guard ring. The GC9703 and GC9704 are planar
schottky devices. The standard devices are available in glass axial leaded
packages as well as in chip form. Custom package styles are available on
request.
APPLICATIONS
General high speed switching. High level mixers and detectors. Bridge quads
for sampling circuits. Well suited for pulse shaping as well as limiting
requirements..
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Symbol
Value
Unit
Carrier Lifetime
Storage Temperature
Operating Temperature
T_L
100
pS
T_STG
-65 to +200
ºC
T_OP
-55 to +150
ºC
GC9700 – GC9704
SCHOTTKY BARRIER DIODES
General Purpose
RoHS Compliant
KEY FEATURES
 Fast Switching
 Low Turn On Voltage
 Economical
 Tape and Reel Available
 RoHS Compliant¹
1 _{The GC9700 Series of products}
are supplied with a RoHS complaint
Gold finish.
APPLICATIONS/BENEFITS
 Mixers
 Detectors
 Limiters
 Pulse Shaping
CHIP ELECTRICAL PARAMETERS @ 25C (unless otherwise specified)
Model Number
V_b(V)
I_R=10μA
(Min)
C_T(pF)
V_R=0V
(Max)
V_F(mV)
I_F=1mA
(Max)
I_F(mA)¹
@ 1.0V
(Min)
I_R(nA)
@ V_R
(Max)
GC9700
70
2.1
430
15
200
GC9701
30
1.5
430
50
100
GC9702
20
1.5
430
35
300
GC9703
8
1.2
350
10¹
100
GC9704
5
0.8
600
10
100
.
Notes:
1. I_F (min) for the GC9703 is measured at V_F = 0.5 V. All others measured at 1.0 V.
V_R(V)
50
25
15
1
1
Copyright  2007
Rev: 2009-01-22
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: [phone]
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