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GC4701 Datasheet, PDF (1/5 Pages) Microsemi Corporation – TM CONTROL DEVICES - LIMITER DIODES
GC4701 - GC4750
TM
®
CONTROL DEVICES – LIMITER DIODES
RoHS Compliant
DESCRIPTION
0B
The GC4700 series diodes are specially processed PIN diodes designed
for use in passive or active limiters at frequencies through Ku band.
Thirteen categories of devices are offered for flexibility in design of low,
medium and high power limiters.
Low VB limiters have thinner I regions for faster turn-on time and better
flat leakage. Microsemi also manufactures “gold doped” limiters for fastest
turn on time. In addition, we manufacture high voltage dual junction
limiters for superior peak and CW power handling.
This series of diodes meets RoHS requirements per EU Directive
2002/95/EC.
APPLICATIONS
A diode limiter is a power-sensitive variable attenuator that uses the non-linear
properties of the diode to provide an impedance mismatch when sufficient amounts
of RF power are incident on the device. The output power is reduced to a level that
will not overdrive a receiver, burn out a mixer, etc. For varying input power levels in
excess of the diode’s threshold level, the limiter’s output power tends to remain
constant.
A passive limiter is one in which the limiter diodes are “turned on” by the RF signal
itself. An active limiter is one in which the limiter diodes are “turned on” primarily by
an external bias current typically supplied by a Schottky detector diode which
senses the incident signal.
Since limiter diodes are not designed to dissipate large amounts of power, the
limiter must reflect or divert the excess incident power back to the source or to
another load (i.e. via a circulator, hybrid coupler, etc.).
Limiter diodes may be used in wave guides, coax, microstrip, stripline or other
media. Single or cascaded devices may be used, depending on power levels.
KEY FEATURES
 Available as packaged devices or
as chips for hybrid applications
 Low Loss
 Suitable for applications to
18Ghz
 Excellent flat leakage
performance
 Low 1 dB compression point
 Gold Doped Diodes for Fast Turn
On
 RoHS Compliant1
1 Most or our devices are supplied with
Gold plated terminations. Other
terminal finishes are available on
request. Consult factory for details.
APPLICATIONS/BENEFITS
 Receiver protection circuits
 Amplifier Protection
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Symbol
Value
Unit
Maximum Leakage Current
@80% of minimum Rated Vb
Operating Temperature
Ir
0.5
uA
T op
-55 to +150
ºC
Storage Temperature
T stg -65 to +150
ºC
IMPORTANT: For the most current data, consult our website: www.MICROSEMI.com
HU
U
Specifications are subject to change, consult the factory for further information.
These devices are ESD sensitive and must be handled using ESD precautions.
Copyright  2006
Rev: 2009-01-19
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: 978-937-3748
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