GC4510 Datasheet, PDF (1/4 Pages) Microsemi Corporation – CONTROL DEVICES High Voltage NIP Diodes TM

TM
®
DESCRIPTION
The GC4500 series are high voltage, high power (anode base) NIP diodes.
These high resistivity silicon devices are passivated with silicon dioxide for
high stability and reliability and have been proven by thousands of device
hours in high reliability systems.
These devices can withstand storage temperatures from -65°C to +200°C
and will operate over the range from -55° to +150°C. All devices meet or
exceed military environmental specifications of MIL-PRF-19500.
The NIP diode is used when negative bias current is available for forward
conduction and will operate typically with -50 mA bias. Breakdown voltages
are available up to 500 volts. (Higher voltages available on request. Consult
factory for details.) These diodes have somewhat faster speeds as compared
with similar PIN diodes.
This series of diodes meets RoHS requirements per EU Directive
2002/95/EC. The standard terminal finish is gold unless otherwise specified.
Consult the factory if you have special requirements.
APPLICATIONS
2B
The GC4500 series can be used in RF circuits as an on/off element, as a
switch or as a current controlled resistor in attenuators extending over the
frequency range from UHF through Ku band.
Switch applications include medium high power switches (ECM systems), TR
or lobing switches, channel or antenna selection switches
(telecommunications), duplexers (radar) and digital phase shifters (phase
arrays).
The GC4500 series are also used as active limiters for low to moderate RF
power levels. Attenuator type applications include amplitude modulators,
AGC attenuators, power levelers and level set attenuators.
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
3B
Rating
Symbol
Value
Unit
Maximum Leakage Current
@80% of Minimum Rated V_B
I_R
0.5
uA
Storage Temperature
T_STG
-65 to +200
ºC
Operating Temperature
T_OP
-55 to +150
ºC
For the most current data, consult our website: www.MICROSEMI.com
HU
U
Specifications are subject to change, consult factory for further information.
These devices are ESD sensitive and must be handled using ESD precautions.
GC4510 – GC4533
CONTROL DEVICES
High Voltage NIP Diodes
RoHS Compliant
KEY FEATURES
 Available as packaged devices or
as chips for hybrid applications
 High power handling
 Suitable for applications to 18Ghz
 Low Loss
 Low Distortion
 RoHS Compliant¹
1 Products are supplied with a Gold finish and are
suitable for RoHS complaint assembly. Consult factory
for details.
APPLICATIONS/BENEFITS
 TR Switches
 Antenna Selector Switches
 Duplexers
 Digital Phase Shifters
Copyright  2006
Rev.: 2009-01-19
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: [phone]
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