GC4410_1 Datasheet, PDF (1/4 Pages) Microsemi Corporation – CONTROL DEVICES - HIGH VOLTAGE PIN DIODES

GC4410 – GC4495
TM
®
CONTROL DEVICES – HIGH VOLTAGE PIN DIODES
RoHS Compliant
DESCRIPTION
The GC4400 series are high voltage, high power (cathode base) PIN diodes. These
high resistivity silicon devices are glass passivated for high stability and reliability
and have been proven by thousands of device hours in high reliability systems.
Each device can withstand storage temperatures from -65°C to +200°C and will
operate over the range from -55°C to +150°C. All devices meet or exceed military
environmental specifications of MIL-PRF-19500.
The GC4400 series will operate typically with +50 mA forward bias. Breakdown
voltages are available up to 750 volts. Consult the factory for higher voltage devices.
KEY FEATURES
 Available as packaged devices or
as chips for hybrid applications
 High power handling
 Suitable for application to 18Ghz
 Low Loss
 Low Distortion
 RoHS Compliant¹
APPLICATIONS
The GC4400 series can be used in RF circuits as an on/off element, as a switch, or
as a current controlled resistor in attenuators extending over the frequency range
from UHF through Ku band.
Switch applications include high speed switches (ECM systems), TR or lobing
switches, channel or antenna selection switches (telecommunications), duplexers
(radar) and digital phase shifters (phased arrays).
The GC4400 series can be used in RF circuits as an on/off at moderate RF power
levels.
Attenuator type applications include amplitude modulators, AGC attenuators, power
levelers and level set attenuators.
1 Products are supplied with a Gold finish and are
suitable for RoHS complaint assembly. Consult
factory for details.
APPLICATIONS/BENEFITS
 TR Switches
 Antenna Selector Switches
 Duplexers
 Digital Phase Shifters
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Leakage Current @80%
Minimum Rated V_B
Leakage Current @80%
Minimum Rated V_B
Operating Temperature
Storage Temperature
GC441X
GC443X
GC449X
Symbol
I_R
I_R
T_OP
T_STG
Value
0.5
1.0
-55 to +150
-65 to +200
Unit
uA
uA
ºC
ºC
IMPORTANT: For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
H
Specifications are subject to change, consult the factory for further information.
These devices are ESD sensitive and must be handled using ESD precautions.
Copyright  2006
Rev: 2009-02-03
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: [phone]
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