GC15001 Datasheet, PDF (1/4 Pages) Microsemi Corporation – TUNING DIODES Frequency Linear Tuning Varactors TM

®
TM
DESCRIPTION
A Frequency Linear Tuning Varactor (FLTVAR™) is a silicon
epitaxial mesa device, designed to provide wideband Linear Tuning
in VCO and filter applications.
These diodes feature superior passivation for high reliability, low
leakage current, and low surface noise. They offer Q values well
above ion-implanted hyperabrupt diodes.
The specifications below apply to chips, or to chips mounted on
carriers. Although these chips can be provided in any of our standard
packages, this is not recommended for the lower capacitance diodes,
because the parallel parasitic capacitance of the package degrades
linearity at high bias voltages.
This series of diodes meets RoHS requirements per EU Directive
2002/95/EC. The standard terminal finish is gold unless otherwise specified.
Consult the factory if you have special requirements.
APPLICATIONS
The GC15000 series of frequency-linear tuning varactors are used in
VCO’s, filters, amplifiers and modulators for wide band tuning through
Ku band. The frequency linear characteristics allow over one octave
linear tuning in suitable circuits, with no need for external
linearization. The combination of high Q and low surface noise
results in low FM noise in VCO applications. They are particularly
useful in modulated VCO’s because of their constant sensitivity, and
high modulation rate capability.
GC15001 – GC15013
TUNING DIODES
Frequency Linear Tuning Varactors
RoHS Compliant
KEY FEATURES
 Wideband Linear Tuning
 Very Low Phase Noise
 Exceptional Q.
 Computer Controlled Grown
Junction Epitaxy
 Functional through Ku Band
 Octave Tuning
 RoHS Compliant¹
1 _{Most products are supplied with a Gold}
finish and are suitable for RoHS
complaint assembly. Consult factory for
details.
APPLICATIONS/BENEFITS
 VCOs
 Filters
 Modulators
 Amplifiers
ABSOLUTE MAXIMUM RATINGS AT 25º C
(UNLESS OTHERWISE SPECIFIED)
Rating
Symbol
Value
Unit
Maximum Leakage Current @
20 Volts
I_R
50
nA
Storage Temperature
T_STG
-65 to +150
ºC
Operating Temperature
T_OP
-55 to +125
ºC
IMPORTANT:
For the most current data, consult our web site: www.microsemi.com
Specifications are subject to change, consult the factory for further information.
These devices are ESD sensitive and must be handled use using ESD precautions.
Copyright  2006
Rev: 2008-12-08
Microsemi
Microwave Products
75 Technology Drive, Lowell, MA. 01851, 978-442-5600, Fax: [phone]
Page 1