CD483B Datasheet, PDF (1/2 Pages) Compensated Deuices Incorporated – GENERAL PURPOSE SILICON DIODES

• GENERAL PURPOSE SILICON DIODES
• ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE
• COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES
EXCEPT SOLDER REFLOW
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified
TYPE
CD483B
CD485B
CD486B
CD645
CD5194
CD5195
CD5196
VRM
V(pk)
80
180
250
270
80
180
250
VRWM
V(pk)
70
180
225
225
70
180
225
IO
IO
IFSM
TA=+150°C tp = 1/120 S
TA=25°C
mA
mA
A
200
50
2
200
50
2
200
50
2
400
150
5
200
50
2
200
50
2
200
50
2
TYPE
CD483B
CD485B
CD486B
CD645
CD5194
CD5195
CD5196
VF(1)
V dc
0.8 - 1.0
0.8 - 1.0
0.8 - 1.0
0.8 - 1.0
0.8 - 1.0
0.8 - 1.0
0.8 - 1.0
IR1 at VRWM IR2 at VRM IR3 at VRWM
TA+25°C
TA+25°C
TA+150°C
nA dc
25
25
25
50
25
25
25
µA
µA dc
100
5
100
5
100
5
50
25
100
5
100
5
100
5
CAP
@VR
=4V
pF
–
–
–
2.0
–
–
–
NOTE 1
AT 100mA (pulsed) except for CD645
which is at 400mA (pulsed)
CD483B
CD485B
CD486B
CD645
AND
CD5194 thru CD5196
24 MILS
12 MILS
DESIGN DATA
METALLIZATION:
Top: (Anode)....................Al
Back: (Cathode)..............Au
AL THICKNESS ............25,000 Å Min
GOLD THICKNESS ........4,000 Å Min
CHIP THICKNESS ..................10 Mils
TOLERANCES: ALL
Dimensions ± 2 mils
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE [phone]
FAX [phone]
WEBSITE: http://www.cdi-diodes.com E-mail: [e-mail]
173