BYI-1 Datasheet, PDF (1/2 Pages) Advanced Power Technology – BYISTORS FOR LINEAR POWER AMPLIFIERS

BYI datasheet Rev A
BYI-1
BYISTOR FOR LINEAR
POWER AMPLIFIERS
GENERAL DESCRIPTION
The BYI-1 is a semiconductor device specifically designed for use in linear
amplifier bias circuitry. The byistor acts as a low impedance D.C. bias source
which has two modes for thermal compensation.
CASE OUTLINE
BYI – 1
55FT
FEATURES
• The package can be physically attached to the same heatsink used for the
RF Power Transistors
• Contains a diode fabricated like an RF Power Transistor (same material,
geometry and diffusion) which provides one mode of thermal tracking
• Contains a silicon resistor which provides a second mode of thermal
tracking
• Fabricated and assembled with the same consistency and precision used
in building RF Power Transistors.
BYISTOR SPECIFICATIONS
Maximum Injector Current I _j = 500 mA
V_ir = 0.85 +/- 0.03 ( I_j = 350 mA, I_s = 0, T_c = 25^oC)
Resistor = 0.70 +/- 0.12 Ω, (T_c = 25^oC)
Maximum Temperatures
Storage Temperature
Operating Junction Temperature
- 65 to +150^oC
+150^oC
Injector
Supplier
Reference
BYISTOR – A DEVICE FOR LINEAR AMPLIFIER BIAS NETWORKS
An essential part of any linear solid state amplifier is the D.C. Bias circuitry. The bias circuitry for class AB must meet all
of the following basic requirements:
• Provide voltage/current capability compatible with the static (zero RF drive) collector current requirements of the
amplifier
• Provide a low impedance voltage source with sufficient current capability to counter the negative rectification
effect of the RF drive on the base of the transistor
• Compensate for the drop in the V_be of the transistor as a function of increasing temperature (thermal tracking) to
eliminate the possibility of D.C. thermal runaway of the amplifier
Microsemi Corp. is delivering a semiconductor device called a BYISTOR, to be used as the key element in a transistor
bias network. The advantages of using a BYISTOR are the excellent temperature tracking for D.C. stability and the
significantly simplified bias circuit. Furthermore, supplemental emitter resistance is not needed to insure D.C. stability.
Jan 2009
Microsemi reserves the right to change, without notice, the specifications and information contained
herein. Visit our web site at www.microsemi.com or contact our factory direct.