BFR92ALT1 Datasheet, PDF (1/1 Pages) Motorola, Inc – RF TRANSISTORS NPN SILICON

RF PRODUCTS DIVISION
BFR92ALT1
RF & MICROWAVE TRANSISTORS
DESCRIPTION
The BFR92ALT1 is a low noise, high gain, discrete
silicon bipolar transistors housed in low cost plastic packages.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
KEY FEATURES
! High FTau-4.5GHz
! Low noise-3.0dB@500MHz
! _{Low cost SOT23 package}
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_DISS
T_J
T_STG
ABSOLUTE MAXIMUM RATINGS (T_CASE = 25 C)
Parameter
Value
Collector-Base Voltage
20
Collector-Emitter Voltage
15
Emitter-Base Voltage
2.0
Device Current
25
Power Dissipation
273
Junction Temperature
150
Storage Temperature
-55 to +150
Unit
V
V
V
mA
mW
C
C
THERMAL DATA
R_{TH(j-c) Junction-Case Thermal Resistance}
275
C/W
APPLICATIONS/BENEFITS
! LNA, Oscillator, Pre-Driver
SOT-23
BFR92ALT1
Symbol
BV_CBO
BV_CEO
I_CBO
h_FE
STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C)
Test
I_C = .1mA
I_C =10mA
V_{CB = 10V}
V_CB =10V
Conditions
I_E = 0
I_B = 0
I_E = 0
I_C = 14mA
Min. Typ.
20
15
40
Max.
50
Units
V
V
nA
Symbol
C_CB
FTau
NF
DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25 C)
Test
Conditions
V_CB = 10 V _f = 1.0 MHz
V_CE = 10 V I_C= 14 mA _f = 500MHz
V_CE = 1.5 VI_C= 3.0 mA _f = 500MHz
Min. Typ.
0.7
4.5
3.0
Max.
Units
PF
GHz
dB
Copyright 2000
Microsemi
RF Products Division
140 Commerce Drive, Montgomeryville PA 18936, [phone], Fax: [phone]
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