APTML102UM09R004T3AG Datasheet, PDF (1/3 Pages) Microsemi Corporation – Linear MOSFET Power Module

APTML102UM09R004T3AG
Linear MOSFET
Power Module
V_DSS = 100V
R_DSon = 09mΩ typ @ Tj = 25°C
I_D = 154A* @ Tc = 25°C
Application
• Electronic load dedicated to power supplies and
battery discharge testing
Features
• Linear MOSFET
• Very low stray inductance
• Internal thermistor for temperature monitoring
• High level of integration
• AlN substrate for improved thermal performance
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
234
78
14
13
10 11 12
Pins 13/14 ; 29/30 ; 31/32 must be shorted together
Benefits
• Direct mounting to heatsink (isolated package)
• easy series and parallels combinations for power and
voltage improvements
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Absolute maximum ratings (per leg)
Symbol
Parameter
Max ratings
Unit
V_DSS Drain - Source Breakdown Voltage
I_D Continuous Drain Current
100
V
T_c = 25°C
154*
T_c = 80°C
115*
A
I_DM
V_GS
R_DSon
P_D
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation n
430
±30
V
10
mΩ
T_c = 25°C
480
W
I_AR Avalanche current (repetitive and non repetitive)
100
A
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
50
3000
mJ
* Output current per leg must be limited to 67A @ T_C=25°C and 47A @ T_C=80°C to not exceed the shunt specification. In addition
the current capability must be limited to 75A on pins 13/14 to not exceed current capability of the pins.
n In saturation mode
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
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