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APTML100U60R020T1AG_10 Datasheet, PDF (1/3 Pages) Microsemi Corporation – Linear MOSFET Power Module | |||
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APTML100U60R020T1AG
Linear MOSFET
Power Module
Pins 1/2 ; 5/6 must be shorted together
Absolute maximum ratings
Symbol
Parameter
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
IDM
VGS
RDSon
PD
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation n
VDSS = 1000V
RDSon = 600mΩ typ @ Tj = 25°C
ID = 20A @ Tc = 25°C
Application
⢠Electronic load dedicated to power supplies and
battery discharge testing
Features
⢠Linear MOSFET
⢠Very low stray inductance
⢠Internal thermistor for temperature monitoring
⢠High level of integration
⢠AlN substrate for improved thermal performance
Benefits
⢠Direct mounting to heatsink (isolated package)
⢠easy series and parallels combinations for power and
voltage improvements
⢠Low junction to case thermal resistance
⢠Solderable terminals both for power and signal for
easy PCB mounting
⢠Low profile
⢠RoHS Compliant
Max ratings Unit
1000
V
Tc = 25°C
20
Tc = 80°C
14
A
74
±30
V
720
mΩ
Tc = 25°C
520
W
n In saturation mode
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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