APTML100U60R020T1AG Datasheet, PDF (1/3 Pages) Microsemi Corporation – Linear MOSFET Power Module

APTML100U60R020T1AG
Linear MOSFET
Power Module
Pins 1/2 ; 5/6 must be shorted together
Absolute maximum ratings
Symbol
Parameter
V_DSS Drain - Source Breakdown Voltage
I_D Continuous Drain Current
I_DM
V_GS
R_DSon
P_D
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation n
V_DSS = 1000V
R_DSon = 600mΩ typ @ Tj = 25°C
I_D = 20A @ Tc = 25°C
Application
• Electronic load dedicated to power supplies and
battery discharge testing
Features
• Linear MOSFET
• Very low stray inductance
• Internal thermistor for temperature monitoring
• High level of integration
• AlN substrate for improved thermal performance
Benefits
• Direct mounting to heatsink (isolated package)
• easy series and parallels combinations for power and
voltage improvements
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Max ratings Unit
1000
V
T_c = 25°C
20
T_c = 80°C
14
A
74
±30
V
630
mΩ
T_c = 25°C
520
W
n In saturation mode
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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