APTM50UM13SAG Datasheet, PDF (1/7 Pages) Microsemi Corporation – Single switch Series & parallel diodes MOSFET Power Module

APTM50UM13SAG
Single switch
Series & parallel diodes
MOSFET Power Module
V_DSS = 500V
R_DSon = 13mΩ typ @ Tj = 25°C
I_D = 335A @ Tc = 25°C
SK
CR1
Application
D
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
S
• Motor control
Features
Q1
• Power MOS 7^® MOSFETs
G
- Low R_DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
S
D
• High level of integration
• AlN substrate for improved thermal performance
SK
Benefits
G
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_DSS
I_D
I_DM
V_GS
R_DSon
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
500
V
T_c = 25°C
335
T_c = 80°C
250
A
1340
±30
V
15
mΩ
P_D Maximum Power Dissipation
T_c = 25°C
3290
W
I_AR Avalanche current (repetitive and non repetitive)
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
71
A
50
mJ
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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