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APTM50HM65FT3G Datasheet, PDF (1/6 Pages) Microsemi Corporation – Full - Bridge MOSFET Power Module | |||
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APTM50HM65FT3G
Full - Bridge
MOSFET Power Module
VDSS = 500V
RDSon = 65m⦠typ @ Tj = 25°C
ID = 51A @ Tc = 25°C
13 14
Q1
Q3
18
22 7
19
23 8
Q2
11
10
Q4
26
4
27
3
29 30
31
32
15
16
R1
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
2 34
78
14
13
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 â¦
Application
⢠Welding converters
⢠Switched Mode Power Supplies
⢠Uninterruptible Power Supplies
Features
⢠Power MOS 7® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
⢠Kelvin source for easy drive
⢠Very low stray inductance
- Symmetrical design
⢠Internal thermistor for temperature monitoring
⢠High level of integration
Benefits
⢠Outstanding performance at high frequency operation
⢠Direct mounting to heatsink (isolated package)
⢠Low junction to case thermal resistance
⢠Solderable terminals both for power and signal for
easy PCB mounting
⢠Low profile
⢠Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
⢠RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
VDSS
ID
IDM
VGS
RDSon
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
500
V
Tc = 25°C
51
Tc = 80°C
38
A
204
±30
V
78
mâ¦
PD Maximum Power Dissipation
Tc = 25°C
390
W
IAR Avalanche current (repetitive and non repetitive)
EAR Repetitive Avalanche Energy
EAS Single Pulse Avalanche Energy
51
A
50
mJ
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1â6
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