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APTM50DHM65T3G Datasheet, PDF (1/5 Pages) Microsemi Corporation – Asymmetrical - Bridge MOSFET Power Module | |||
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APTM50DHM65T3G
Asymmetrical - Bridge
MOSFET Power Module
VDSS = 500V
RDSon = 65mΩ typ @ Tj = 25°C
ID = 51A @ Tc = 25°C
13 14
Q1
18
CR3
22
7
19
23
8
Q4
CR2
4
29
30
15
31
R1
3
32
16
28 27 26 25
29
30
23 22
20 19 18
16
15
31
32
234
78
14
13
10 11 12
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23â¦
Application
⢠Welding converters
⢠Switched Mode Power Supplies
⢠Switched Reluctance Motor Drives
Features
⢠Power MOS 8⢠MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
⢠Kelvin source for easy drive
⢠Very low stray inductance
- Symmetrical design
⢠Internal thermistor for temperature monitoring
⢠High level of integration
Benefits
⢠Outstanding performance at high frequency operation
⢠Direct mounting to heatsink (isolated package)
⢠Low junction to case thermal resistance
⢠Solderable terminals both for power and signal for
easy PCB mounting
⢠Low profile
⢠RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
500
V
Tc = 25°C
51
Tc = 80°C
38
A
IDM
VGS
RDSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
270
±30
V
78
mΩ
PD Maximum Power Dissipation
Tc = 25°C
390
W
IAR Avalanche current (repetitive and non repetitive)
42
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1â5
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