APTM50DHM35G Datasheet, PDF (1/6 Pages) Microsemi Corporation – Asymmetrical - bridge MOSFET Power Module

APTM50DHM35G
Asymmetrical - bridge
MOSFET Power Module
V_DSS = 500V
R_DSon = 35mΩ typ @ Tj = 25°C
I_D = 99A @ Tc = 25°C
VBUS
Application
Q1
G1
CR3
• Welding converters
• Switched Mode Power Supplies
• Switched Reluctance Motor Drives
OUT2
S1
OUT1
Q4
CR2
0/VB US
Features
• Power MOS 7^® MOSFETs
- Low R_DSon
- Low input and Miller capacitance
G4
- Low gate charge
- Avalanche energy rated
S4
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
G1
VB US
S1
OUT1
0/VBUS
OUT2
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
S4
• Low junction to case thermal resistance
G4
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_DSS Drain - Source Breakdown Voltage
I_D Continuous Drain Current
500
V
T_c = 25°C
99
T_c = 80°C
74
A
I_DM
V_GS
R_DSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
396
±30
V
39
mΩ
P_D Maximum Power Dissipation
T_c = 25°C
781
W
I_AR Avalanche current (repetitive and non repetitive)
51
A
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
50
mJ
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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