APTM50AM24SCG Datasheet, PDF (1/7 Pages) Microsemi Corporation – Phase leg Series & SiC parallel diodes MOSFET Power Module

APTM50AM24SCG
Phase leg
Series & SiC parallel diodes
MOSFET Power Module
VBUS
V_DSS = 500V
R_DSon = 24mΩ typ @ Tj = 25°C
I_D = 150A @ Tc = 25°C
Application
• Motor control
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
Q1
G1
OUT
S1
Q2
G2
0/ VB US
S2
Features
• Power MOS 7^® MOSFETs
- Low R_DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Parallel SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
G1
VBUS
S1
0/VBUS
OUT
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
Benefits
S2
• Outstanding performance at high frequency operation
G2
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_DSS Drain - Source Breakdown Voltage
500
V
I_D Continuous Drain Current
T_c = 25°C
150
T_c = 80°C
110
A
I_DM Pulsed Drain current
V_GS Gate - Source Voltage
600
±30
V
R_DSon Drain - Source ON Resistance
28
mΩ
P_D Maximum Power Dissipation
T_c = 25°C
1250
W
I_AR Avalanche current (repetitive and non repetitive)
24
A
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
30
mJ
1300
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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