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APTM20UM04SAG Datasheet, PDF (1/6 Pages) Microsemi Corporation – Single switch Series & parallel diodes MOSFET Power Module | |||
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APTM20UM04SAG
Single switch
Series & parallel diodes
MOSFET Power Module
SK
CR1
D
S
Q1
G
S
D
SK
G
VDSS = 200V
RDSon = 4m⦠typ @ Tj = 25°C
ID = 417A @ Tc = 25°C
Application
⢠Welding converters
⢠Switched Mode Power Supplies
⢠Uninterruptible Power Supplies
⢠Motor control
Features
⢠Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
⢠Kelvin source for easy drive
⢠Very low stray inductance
- Symmetrical design
- M5 power connectors
⢠High level of integration
⢠AlN substrate for improved thermal performance
Benefits
⢠Outstanding performance at high frequency operation
⢠Direct mounting to heatsink (isolated package)
⢠Low junction to case thermal resistance
⢠Low profile
⢠RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
VDSS
ID
IDM
VGS
RDSon
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
200
V
Tc = 25°C
417
Tc = 80°C
310
A
1670
±30
V
5
mâ¦
PD Maximum Power Dissipation
Tc = 25°C
1560
W
IAR Avalanche current (repetitive and non repetitive)
EAR Repetitive Avalanche Energy
EAS Single Pulse Avalanche Energy
100
A
50
mJ
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1â6
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