APTM20HM16FTG Datasheet, PDF (1/6 Pages) Microsemi Corporation – Full - Bridge MOSFET Power Module

APTM20HM16FTG
Full - Bridge
MOSFET Power Module
V_DSS = 200V
R_DSon = 16mΩ typ @ Tj = 25°C
I_D = 104A @ Tc = 25°C
VB US
Q1
Q3
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
G1
G3
S1
OUT1 OUT2
S3
Q2
Q4
G2
S2
NTC1
0/VBU S
G4
S4
NTC2
G3
S3
VBUS
S1
G1
G4
S4
0/VBUS
S2
G2
OUT2
OUT1
NTC2
NTC1
Features
• Power MOS 7^® FREDFETs
- Low R_DSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_DSS
I_D
I_DM
V_GS
R_DSon
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
200
V
T_c = 25°C
104
T_c = 80°C
77
A
416
±30
V
19
mΩ
P_D Maximum Power Dissipation
T_c = 25°C
390
W
I_AR Avalanche current (repetitive and non repetitive)
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
104
A
50
mJ
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–6