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APTM20DHM10G Datasheet, PDF (1/6 Pages) Microsemi Corporation – Asymmetrical - bridge MOSFET Power Module | |||
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APTM20DHM10G
Asymmetrical - bridge
MOSFET Power Module
VDSS = 200V
RDSon = 10m⦠typ @ Tj = 25°C
ID = 175A @ Tc = 25°C
VBUS
Q1
CR3
G1
OUT2
S1
OUT1
Q4
CR2
G4
S4
0/VB US
G1
VBUS
S1
OUT1
0/VBUS
S4
G4
O UT2
Application
⢠Welding converters
⢠Switched Mode Power Supplies
⢠Switched Reluctance Motor Drives
Features
⢠Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
⢠Kelvin source for easy drive
⢠Very low stray inductance
- Symmetrical design
- M5 power connectors
⢠High level of integration
Benefits
⢠Outstanding performance at high frequency operation
⢠Direct mounting to heatsink (isolated package)
⢠Low junction to case thermal resistance
⢠Low profile
⢠RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
VDSS
ID
IDM
VGS
RDSon
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
200
V
Tc = 25°C
175
Tc = 80°C
131
A
700
±30
V
12
mâ¦
PD Maximum Power Dissipation
Tc = 25°C
694
W
IAR Avalanche current (repetitive and non repetitive)
EAR Repetitive Avalanche Energy
EAS Single Pulse Avalanche Energy
89
A
50
mJ
2500
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1â6
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