APTM20DAM08TG Datasheet, PDF (1/6 Pages) Advanced Power Technology – Boost chopper MOSFET Power Module

APTM20DAM08TG
Boost chopper
MOSFET Power Module
V_DSS = 200V
R_DSon = 8mΩ typ @ Tj = 25°C
I_D = 208A @ Tc = 25°C
VBUS SENSE
VBUS
NT C2
CR1
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
Features
Q2
G2
S2
0/VBU S
O UT
NT C1
G2
OUT
S2
• Power MOS 7^® MOSFETs
- Low R_DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
VB US
VB US
SE NSE
0/ VB US
S2
G2
OUT
NTC2
NTC1
Absolute maximum ratings
Symbol
Parameter
V_DSS Drain - Source Breakdown Voltage
I_D Continuous Drain Current
I_DM
V_GS
R_DSon
P_D
I_AR
E_AR
E_AS
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS compliant
Max ratings Unit
200
V
T_c = 25°C
208
T_c = 80°C
155
A
832
±30
V
10
mΩ
T_c = 25°C
781
W
100
A
50
mJ
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–6