|
APTM120U10SCAVG Datasheet, PDF (1/8 Pages) Microsemi Corporation – Single switch Series & SiC parallel diodes MOSFET Power Module | |||
|
APTM120U10SCAVG
Single switch
Series & SiC parallel diodes
MOSFET Power Module
VDSS = 1200V
RDSon = 100mΩ typ @ Tj = 25°C
ID = 116A @ Tc = 25°C
D
DK
G
SK
S
G, SK and DK terminals are for control signals only
(not for power)
DK
S
D
SK
G
Application
⢠Welding converters
⢠Switched Mode Power Supplies
⢠Uninterruptible Power Supplies
⢠Motor control
Features
⢠Power MOS 7® MOSFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
⢠SiC Parallel Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
⢠Kelvin source for easy drive
⢠Kelvin drain for voltage monitoring
⢠Very low stray inductance
- Symmetrical design
- M5 power connectors
- M3 power connectors
⢠High level of integration
⢠AlN substrate for improved MOSFET thermal
performance
Benefits
⢠Outstanding performance at high frequency
operation
⢠Direct mounting to heatsink (isolated package)
⢠Low junction to case thermal resistance
⢠Low profile
⢠RoHS Compliant
All ratings @ Tj = 25°C unless otherwise specified
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1â8
|
▷ |