APTM120U10DAG Datasheet, PDF (1/6 Pages) Microsemi Corporation – Single switch with Series diodes MOSFET Power Module

APTM120U10DAG
Single switch
with Series diodes
MOSFET Power Module
V_DSS = 1200V
R_DSon = 100mΩ typ @ Tj = 25°C
I_D = 116A @ Tc = 25°C
SK
S
G
SK
G
Application
D
• Zero Current Switching resonant mode
Features
• Power MOS 7^® MOSFETs
- Low R_DSon
DK
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
S
D
• AlN substrate for improved thermal performance
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_DSS Drain - Source Breakdown Voltage
I_D Continuous Drain Current
1200
V
T_c = 25°C
116
T_c = 80°C
86
A
I_DM
V_GS
R_DSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
464
±30
V
120
mΩ
P_D Maximum Power Dissipation
T_c = 25°C
3290
W
I_AR Avalanche current (repetitive and non repetitive)
24
A
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
50
mJ
3200
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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