APTM120H29FG Datasheet, PDF (1/6 Pages) Microsemi Corporation – Full - Bridge MOSFET Power Module

APTM120H29FG
Full - Bridge
MOSFET Power Module
V_DSS = 1200V
R_DSon = 290mΩ typ @ Tj = 25°C
I_D = 34A @ Tc = 25°C
Q1
G1
S1
Q2
G2
S2
G1
VBUS
S1
S3
G3
VB US
Q3
Q4
0/VBUS
O UT 1
0/VBUS
O UT 2
Application
• Welding converters
• Switched Mode Power Supplies
G3
• Uninterruptible Power Supplies
• Motor control
S3
Features
• Power MOS 7^® FREDFETs
G4
- Low R_DSon
- Low input and Miller capacitance
- Low gate charge
S4
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
G2
S2
Benefits
S4
• Outstanding performance at high frequency operation
G4
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_DSS
I_D
I_DM
V_GS
R_DSon
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
1200
V
T_c = 25°C
34
T_c = 80°C
25
A
136
±30
V
348
mΩ
P_D Maximum Power Dissipation
T_c = 25°C
780
W
I_AR Avalanche current (repetitive and non repetitive)
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
22
A
50
mJ
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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