|
APTM120H140FT1G Datasheet, PDF (1/5 Pages) Microsemi Corporation – Full - Bridge MOSFET Power Module | |||
|
APTM120H140FT1G
Full - Bridge
MOSFET Power Module
VDSS = 1200V
RDSon = 1.4Ω typ @ Tj = 25°C
ID = 8A @ Tc = 25°C
3
4
Q1
Q3
5
2
61
Q2
Q4
7
9
8
10
11
NTC
12
Pins 3/4 must be shorted together
Application
⢠Welding converters
⢠Switched Mode Power Supplies
⢠Uninterruptible Power Supplies
⢠Motor control
Features
⢠Power MOS 8⢠Fast FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
⢠Very low stray inductance
- Symmetrical design
⢠Internal thermistor for temperature monitoring
⢠High level of integration
Benefits
⢠Outstanding performance at high frequency operation
⢠Direct mounting to heatsink (isolated package)
⢠Low junction to case thermal resistance
⢠Solderable terminals both for power and signal for
easy PCB mounting
⢠Low profile
⢠Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
⢠RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings
Unit
VDSS Drain - Source Breakdown Voltage
ID Continuous Drain Current
1200
V
Tc = 25°C
8
Tc = 80°C
6
A
IDM
VGS
RDSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
50
±30
V
1.68
Ω
PD Maximum Power Dissipation
Tc = 25°C
208
W
IAR Avalanche current (repetitive and non repetitive)
7
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1â5
|
▷ |