APTM120DA30CT1G Datasheet, PDF (1/5 Pages) Microsemi Corporation – MOSFET + SiC chopper diode

APTM120DA30CT1G
Boost chopper
MOSFET + SiC chopper diode
Power Module
V_DSS = 1200V
R_DSon = 300mΩ typ @ Tj = 25°C
I_D = 31A @ Tc = 25°C
56
11
CR1
3 _NTC
Q2
4
9
10
12
12
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
Features
• Power MOS 8™ MOSFET
- Low R_DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• SiC Schottky Diode
- Zero reverse recovery
- Zero forward recovery
- Temperature Independent switching behavior
- Positive temperature coefficient on VF
• Very low stray inductance
• Internal thermistor for temperature monitoring
• High level of integration
Benefits
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
Absolute maximum ratings
Symbol
Parameter
V_DSS Drain - Source Breakdown Voltage
I_D Continuous Drain Current
I_DM
V_GS
R_DSon
P_D
I_AR
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
• Low profile
• RoHS Compliant
Max ratings
Unit
1200
V
T_c = 25°C
31
T_c = 80°C
23
A
195
±30
V
360
mΩ
T_c = 25°C
657
W
25
A
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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