APTM120DA15G Datasheet, PDF (1/6 Pages) Microsemi Corporation – Boost chopper MOSFET Power Module

APTM120DA15G
Boost chopper
MOSFET Power Module
V_DSS = 1200V
R_DSon = 150mΩ typ @ Tj = 25°C
I_D = 60A @ Tc = 25°C
VB US
CR1
OUT
Q2
G2
S2
0/VBUS
V BUS
S2
G2
0/VBUS
O UT
Application
• AC and DC motor control
• Switched Mode Power Supplies
• Power Factor Correction
Features
• Power MOS 7^® MOSFETs
- Low R_DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_DSS
I_D
I_DM
V_GS
R_DSon
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
1200
V
T_c = 25°C
60
T_c = 80°C
45
A
240
±30
V
175
mΩ
P_D Maximum Power Dissipation
T_c = 25°C
1250
W
I_AR Avalanche current (repetitive and non repetitive)
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
22
A
50
mJ
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1–6