APTM10UM01FAG Datasheet, PDF (1/6 Pages) Microsemi Corporation – Single Switch MOSFET Power Module

APTM10UM01FAG
Single Switch
MOSFET Power Module
V_DSS = 100V
R_DSon = 1.5mΩ typ @ Tj = 25°C
I_D = 860A* @ Tc = 25°C
Application
SK
• Welding converters
• Switched Mode Power Supplies
S
D
• Uninterruptible Power Supplies
• Motor control
G
DK
Features
• Power MOS V^® FREDFETs
DK
- Low R_DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Fast intrinsic diode
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
S
D
• High level of integration
• AlN substrate for improved thermal performance
SK
Benefits
G
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_DSS Drain - Source Breakdown Voltage
I_D Continuous Drain Current
100
V
T_c = 25°C
860 *
T_c = 80°C
640 *
A
I_DM
V_GS
R_DSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
2200
±30
V
1.6
mΩ
P_D Maximum Power Dissipation
T_c = 25°C
2500
W
I_AR Avalanche current (repetitive and non repetitive)
100
A
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
50
mJ
3000
* Specification of MOSFET device but output current must be limited to 500A to not exceed a delta of temperature
greater than 100°C for the connectors.
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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