APTM10TDUM19PG Datasheet, PDF (1/7 Pages) Microsemi Corporation – Triple dual common source MOSFET Power Module

APTM10TDUM19PG
Triple dual common source
MOSFET Power Module
V_DSS = 100V
R_DSon = 19mΩ typ @ Tj = 25°C
I_D = 70A @ Tc = 25°C
D1
D3
D5
Application
G1
G3
G5
• AC Switches
• Switched Mode Power Supplies
S1
S3
S 1/ S2
S5
S3/ S4
S5/ S6
• Uninterruptible Power Supplies
S2
G2
D2
S4
G4
D4
S6
G6
D6
Features
• Power MOS V^® MOSFETs
- Low R_DSon
- Low input and Miller capacitance
- Low gate charge
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
Benefits
D1
G1
S1/S 2
S1
S2
D3
G3
S3/S 4
S3
S4
D5
G5
S5/S6
S5
S6
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Solderable terminals both for power and signal for
easy PCB mounting
G2
D2
G4
D4
G6
D6
• Very low (12mm) profile
• Each leg can be easily paralleled to achieve a dual
common source configuration of three times the
current capability
• RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
V_DSS Drain - Source Breakdown Voltage
I_D Continuous Drain Current
100
V
T_c = 25°C
70
T_c = 80°C
50
A
I_DM
V_GS
R_DSon
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
300
±30
V
21
mΩ
P_D Maximum Power Dissipation
T_c = 25°C
208
W
I_AR Avalanche current (repetitive and non repetitive)
E_AR Repetitive Avalanche Energy
E_AS Single Pulse Avalanche Energy
75
A
30
mJ
1500
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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