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APTM10HM09FTG Datasheet, PDF (1/6 Pages) Microsemi Corporation – Full - Bridge MOSFET Power Module | |||
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APTM10HM09FTG
Full - Bridge
MOSFET Power Module
VDSS = 100V
RDSon = 9m⦠typ @ Tj = 25°C
ID = 139A @ Tc = 25°C
VBUS
Q1
Q3
G1
G3
S1
O UT1 O UT2
S3
Q2
Q4
G2
S2
NT C1
0/V BU S
G4
S4
NT C2
Application
⢠Welding converters
⢠Switched Mode Power Supplies
⢠Uninterruptible Power Supplies
⢠Motor control
Features
⢠Power MOS V® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic diode
- Avalanche energy rated
- Very rugged
⢠Kelvin source for easy drive
⢠Very low stray inductance
- Symmetrical design
- Lead frames for power connections
⢠Internal thermistor for temperature monitoring
⢠High level of integration
G3
S3
VBUS
S1
G1
G4
S4
0/VBUS
S2
G2
OUT2
OUT1
NTC2
NTC1
Benefits
⢠Outstanding performance at high frequency operation
⢠Direct mounting to heatsink (isolated package)
⢠Low junction to case thermal resistance
⢠Solderable terminals both for power and signal for
easy PCB mounting
⢠Low profile
⢠RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
VDSS
ID
IDM
VGS
RDSon
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
100
V
Tc = 25°C
139
Tc = 80°C
100
A
430
±30
V
10
mâ¦
PD Maximum Power Dissipation
Tc = 25°C
390
W
IAR Avalanche current (repetitive and non repetitive)
EAR Repetitive Avalanche Energy
EAS Single Pulse Avalanche Energy
100
A
50
mJ
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
1â6
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