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APTM10HM05FG Datasheet, PDF (1/6 Pages) Microsemi Corporation – Full - Bridge MOSFET Power Module | |||
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APTM10HM05FG
Full - Bridge
MOSFET Power Module
VDSS = 100V
RDSon = 4.5m⦠typ @ Tj = 25°C
ID = 278A @ Tc = 25°C
Q1
G1
S1
Q2
G2
S2
VBUS
Q3
Q4
0/VBUS
G1
VBUS
S1
S3
G3
O UT 1
0/VBUS
O UT 2
Application
⢠Welding converters
⢠Switched Mode Power Supplies
⢠Uninterruptible Power Supplies
G3
⢠Motor control
Features
S3
⢠Power MOS V® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
G4
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
S4
⢠Kelvin source for easy drive
⢠Very low stray inductance
- Symmetrical design
- M5 power connectors
⢠High level of integration
G2
Benefits
S2
⢠Outstanding performance at high frequency operation
⢠Direct mounting to heatsink (isolated package)
S4
⢠Low junction to case thermal resistance
G4
⢠Low profile
⢠RoHS Compliant
Absolute maximum ratings
Symbol
Parameter
Max ratings Unit
VDSS
ID
IDM
VGS
RDSon
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
100
V
Tc = 25°C
278
Tc = 80°C
207
A
1100
±30
V
5
mâ¦
PD Maximum Power Dissipation
Tc = 25°C
780
W
IAR Avalanche current (repetitive and non repetitive)
EAR Repetitive Avalanche Energy
EAS Single Pulse Avalanche Energy
100
A
50
mJ
3000
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
www.microsemi.com
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